本文采用脉冲激光沉积法成功制备出,Cu2O:Cu复合薄膜,Cu2O薄膜。结果表明在600℃时易获得纯Cu2O薄膜,当温度升高到700℃时,会有铜单质的出现,并通过X射线衍射(XRD),原子力显微镜(AFM),扫描电子显微镜(SEM),探究了薄膜的生长取向和表面形貌,在STO (001)基底上,Cu2O生长取向为(002),Cu为(022)。同时利用透射电子显微镜测试了薄膜的微结构,但由于Cu颗粒或团簇尺寸太小,并不能直接被观察到。薄膜的光吸收测试表明,这种颗粒掺杂的复合薄膜较纯Cu2O薄膜,在部分波段具有更高的吸收系数。 Pulsed deposition method (PLD) was successfully used in the manufacture of Cu2O and Cu2O:Cu composite thin films. The results showed that we could obtain the pure Cu2O film at 600˚C, and that the elemental copper particles occurred when the temperature rose to 700˚C. In addition, X-ray diffraction, atomic force microscopy and scanning electron microscope were used in the research of growth orientation and surface topography. The orientation between film and substrate is STO(001)//Cu2O(002)//Cu(002). Also the microstructure of the composite film was tested by transmission electron microscopy, but Cu particles or clusters’ size were too small; so we could hardly observe them directly. The absorption coefficient of the particles doped composite film is higher than the pure Cu2O film during some wavelength.
王刘勇. 单质铜颗粒掺杂的氧化亚铜复合薄膜制备及物性研究Fabrication and Physical Properties of Cu2O:Cu Composite Thin Films[J]. 应用物理, 2015, 05(11): 131-136. http://dx.doi.org/10.12677/APP.2015.511018
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