III-V族半导体材料因其光电子应用中的优势而备受关注。这些材料中,GaSb和GaSb相关半导体材料因具有高的载流子迁移率和较窄的禁带宽度而被认为是中红外波段光电子半导体器件的首选材料。然而,半导体光电子器件的性能强烈依赖于材料的结构和光学性质,所以GaSb材料的研究工作重点是如何提高晶体质量,精确调整合金组分,提高发光性能等。本文对2~5 μm GaSb和GaSb相关半导体材料的外延生长和材料性质的研究进展做出了简要的概述,主要讨论了GaSb材料、GaSb合金薄膜材料以及GaSb基量子阱材料的外延生长过程及材料性质,以期获得GaSb基半导体材料外延生长的最优条件。 III-V group semiconductors have received a great deal of attention because of their potential ad-vantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-per- formance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materials, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. In this paper, the progress of epitaxial growth and material properties of 2 - 5 μm GaSb and GaSb-related semiconductor materials are briefly reviewed. The epitaxial growth processes and material properties of GaSb, GaSb related alloy materials and GaSb- based quantum well materials are discussed in order to obtain the optimal conditions for epitaxial growth of GaSb-based semiconductor materials.
锑化镓,I型量子阱,W型量子阱,分子束外延, GaSb Type-I Quantum Well Type-W Quantum Well MBE2~5 μm中红外波段GaSb半导体材料研究进展
2015年,Seth R. Bank [39] 等人在低温下生长GaSb基I型量子阱,通过增加二极管激光器中的有源层的应变来延长发射波长。在350℃的衬底温度下生长量子阱结构,高达2.8%的压缩应变被掺入具有GaSb阻挡层的InGaAsSb/AlGaAsSb量子阱中,这些结构表现出室温光致发光峰值至3.96 μm。图9为不用In组分与应变的InGaAsSb/AlGaAsSb量子阱样品的室温PL光谱。
2016年,俄罗斯圣彼得堡理工大学Maxim Ya. Vinnichenko [40] 等人实验研究了具有不同阱层宽度的InGaAsSb/AlGaAsSb量子阱的带间光致发光光谱,并计算了参与辐射复合的电荷载流子浓度对泵浦强度的依赖性。理论计算结果与实验结果得到很好地一致。在一个样品中检测到涉及两个空穴和一个电子简并导致电荷载流子浓度显着降低的共振俄歇复合。制定了抑制有害非辐射俄歇复合的建议,以提高波长约3 μm半导体注入激光器的工作效率。2017年,他们 [41] 继续在理论与实验条件下研究了不同的光泵浦能级下不同势阱层宽度的InGaAsSb/AlGaAsSb量子阱结构光致发光(PL)光谱。实验测定了光致发光强度与光抽运能级的依赖关系,计算了光致发光强度对非平衡载流子浓度的依赖关系。通过实验与理论计算的对比证明了在一个研究的样品中共振非辐射俄歇复合的存在。图10为不同阱层宽度的InGaAsSb/AlGaAsSb量子阱的光致发光光谱。
2017年,Maxim Ya. Vinnichenko [42] 等人在具有各种势垒材料和量子阱宽度的InGaAsSb/AlGaAsSb量
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