﻿ 一种基于栅极控制的IGBT串联动态均压方法 A Dynamic Voltage Equalization Method for Series IGBT Based on Gate Control

Smart Grid
Vol. 09  No. 04 ( 2019 ), Article ID: 31683 , 7 pages
10.12677/SG.2019.94017

A Dynamic Voltage Equalization Method for Series IGBT Based on Gate Control

Yangjingyi Luo, Shaofeng Huang, Yifan Li, Gang Huang

School of Electrical and Electronic Engineering, North China Electric Power University, Beijing

Received: July 22nd, 2019; accepted: August 6th, 2019; published: August 13th, 2019

ABSTRACT

At present, the voltage withstanding capacity of single insulated gate bipolar transistor (IGBT) is not enough to meet the needs of high voltage and high power rectifier, inverters, flexible transmission and other occasions. Series use of IGBT is an effective way to improve the voltage withstanding ability. Solving the problem of voltage equalization is the key to realize series application of IGBT. In this paper, the dynamic switching process of IGBT is analyzed in detail, and the mechanism of series unbalanced voltage caused by the delay of gate driving signal is analyzed. Based on this, a grid-controlled IGBT series dynamic voltage balancing control method is proposed. The dynamic voltage balancing in series is realized by extending Miller platform and suppressing the slope of collector voltage. The circuit structure and the working principle are given. The simulation on MATLAB/SIMULINK platform verifies the validity and feasibility of this method.

Keywords:IGBT, Dynamic Voltage Equalization, Miller Platform, Series Connected

1. 引言

2. 串联IGBT动态不均压机理分析

IGBT串联使用过程中，栅极驱动信号延时导致的不均压问题涉及导通和关断两个动态过程。由于不均压机理相似，所以限于篇幅，本文以关断过程为主进行分析，相应地，所提出的控制方法同样适用于导通过程。

2.1. IGBT的关断过程

IGBT的关断过程可用图1(a)所示栅极等效电路进行分析。如图1(a)所示，RG表示栅极驱动电阻；VD表示栅极驱动电压；CGC、CGE、CCE分别表示栅极–集电极电容、栅极–发射极电容、集电极–发射极电容。其中，栅–集电容CGC又称为密勒电容 [12] 。

(a) 栅极等效电路 (b) 关断波形

Figure 1. Gate Equivalent Circuit and Turn-off Waveform

$\frac{{d}_{{V}_{CE}}}{{d}_{t}}=-\frac{{i}_{G}}{{C}_{GC}}=-\frac{{V}_{D}-{V}_{M}}{{R}_{G}\ast {C}_{GC}}$ (1)

2.2. 驱动信号延迟导致的串联不均压机理分析

3. 串联IGBT动态均压控制

3.1. 串联IGBT动态均压控制电路

(a) 动态均压控制结构框图 (b) 驱动控制模块内部电路

Figure 2. Dynamic voltage balancing control structure and internal circuit of drive module

3.2. 工作原理

4. 仿真验证

Figure 3. IGBT Series Dynamic Voltage Equalization Simulation Model

${\alpha }_{1}%=\left({V}_{CE1\mathrm{max}}-0.5{V}_{DC}\right)/0.5{V}_{DC}×100%=49.5%$ (2)

${\alpha }_{2}%=\left({V}_{CE2max}-0.5{V}_{DC}\right)/0.5{V}_{DC}×100%=14.1\text{%}$ (3)

(a) 均压控制后端电压VCE波形 (b) 无均压电路端电压VCE波形 (c) 无均压电路栅射电压VGE波形 (d) 无均压电路端电压VCE波形 (e) 均压控制后栅射电压VGE波形 (f) 均压控制后端电压VCE波形

Figure 4. Dynamic voltage equalization simulation waveform

5. 结语

A Dynamic Voltage Equalization Method for Series IGBT Based on Gate Control[J]. 智能电网, 2019, 09(04): 157-163. https://doi.org/10.12677/SG.2019.94017

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