对半导体隧道级联激光器的发展近况和技术突破以及工艺优化进行分析总结,着重介绍了大功率半导体隧道级联激光器在研究领域的部分性能的优化以及创新点。 This article analyzes the development of cascade semiconductor lasers with tunnel junctions, technological breakthroughs and process optimization, and highlights some of the optimization and innovation of high-power semiconductor tunnel cascade lasers in the research field.
大功率,隧道结,半导体激光器,级联, High Power Tunnel Junction Semiconductor Laser Cascade大功率隧道结级联半导体激光器研究进展
2006年,Jingzhou Yan [10] 等人提出一种双波长隧道结级联激光器,激射波长分别为1350 nm和1450 nm,经实验测试,短波的有源区最先激射,阈值电流为170 mA (另外长波处的阈值电流为280 mA),最先激射的原因是短波多量子阱有源区具有更短的条宽,这与他们推测相反,即短波难以实现激光发射,并且光功率比长波长大10 dB,可能的解释是两个有源区分别位于两个PIN结构上,可作为独立的电泵浦,从而减少两种波长模式之间的增益竞争。经过他们的研究表明,过设计隧道结级联激光器的几何结构可以在集成光子系统中实现同时多波长的激光发射。
S. M. Nekorkin等人 [11] 在2007年为避免不同频率的模态交叉吸收,实现相位匹配,设计并提出一种双波长隧道结级联激光器,长波段产生TE1模,短波段产生TE3模。他们采用MOCVD外延技术生长激光器结构,对于横向电流限制,由80 keV的氢离子注入以形成100 μm宽的条宽,腔体切割成0.4~1.5 mm的长度。他们在室温、输入信号脉冲宽度为350 ns、重复率为1.6 kHz的条件下对激光器进行了测试,明显的测量到951 nm和1063 nm两个波长,两者的阈值电流为10 A,非线性信号的最大观测功率为30 nW (输入电流为35 A),对于二次谐波,测量出非线性转换率约为10 nW/W2,对于和频的产生,测量的转换效率为1 nW/W2,与0.1 μm的相干长度相吻合。实验显示他们设计的波导结构能够大大消除不同频率下激光模式的交叉影响,并支持所有波长的低损耗模式。
文振宇,李建军,曹红康,袁泽旭,王梦欢. 大功率隧道结级联半导体激光器研究进展 Research Progress in High Power Cascade Lasers with Tunnel Junctions[J]. 光电子, 2018, 08(04): 149-157. https://doi.org/10.12677/OE.2018.84020
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